TPCF8A01 2007-01-16 1 toshiba multi-chip device silicon n channel mos type (u-mos iii ) / schottky barrier diode TPCF8A01 notebook pc applications portable equipment applications ? low drain-source on resistance: r ds (on) = 38 m ? (typ.) ? high forward transfer admittance: |y fs | = 5.4 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 20 v) ? enhancement mode: v th = 0.5 to 1.2 v (v ds = 10 v, i d = 200 a) ? low forward voltage: v fm(2) = 0.46v(typ.) absolute maximum ratings mosfet (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 20 v drain-gate voltage (r gs = 20 k ? ) v dgr 20 v gate-source voltage v gss 12 v dc (note 1) i d 3 drain current pulse (note 1) i dp 12 a single pulse avalanche energy (note 4) e as 1.46 mj avalanche current i ar 1.5 a repetitive avalanche energy single-device value at dual operation (note 2a, 3b, 5) e ar 0.11 mj sbd (ta = 25c) characteristics symbol rating unit repetitive peak reverse voltage v rrm 20 v average forward current (note 2a, 6) i f(av) 1.0 a peak one cycle surge forward current (non-repetitive) i fsm 7(50hz) a absolute maximum ratings for mosfet and sbd (ta = 25c) characteristics symbol rating unit single-device operation (note 3a) p d (1) 1.35 drain power dissipation (t = 5 s) (note 2a) single-device value at dual operation (note 3b) p d (2) 1.12 single-device operation (note 3a) p d (1) 0.53 drain power dissipation (t = 5 s) (note 2b) single-device value at dual operation (note 3b) p d (2) 0.33 w channel temperature t ch 150 c storage temperature range t stg -55~150 c note: (note 1), (note 2), (note 3), (note 4), (note 5), (note 6) and (note 7): see the next page. using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm jedec D jeita D toshiba 2-3u1c weight: 0.011 g (typ.) circuit configuration 12 3 4 8 7 6 5
TPCF8A01 2007-01-16 2 thermal characteristics for mosfet and sbd characteristics symbol max unit single-device operation (note 3a) r th (ch-a) (1) 92.6 thermal resistance, channel to ambient (t = 5 s) (note 2a) single-device value at dual operation (note 3b) r th (ch-a) (2) 111.6 c/w single-device operation (note 3a) r th (ch-a) (1) 235.8 thermal resistance, channel to ambient (t = 5 s) (note 2b) single-device value at dual operation (note 3b) r th (ch-a) (2) 378.8 c/w this transistor is an electrostatic-sensitive device. please handle with caution. schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. this current leakage and improper operating temperature or voltage may cause thermal runaway. please take forward and reverse loss into consideration during design. marking (note 7) note 1: ensure that the channel temperature does not exceed 150 . note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: a) the power dissipation and thermal resistance values are shown for a single device (during single-device operation, power is only applied to one device.). b) the power dissipation and thermal resistance values are shown for a single device (during dual operation, power is evenly applied to both devices.). note 4: v dd = 16 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 ? , i ar = 1.5 a note 5: repetitive rating: pulse width limited by maximum channel temperature note 6: rectangular waveform ( =180 o ), v r =15v. note 7: on the lower left of the marking indicates pin 1. fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) (a) 25.4 25.4 part no. (or abbreviation code) f7a a line indicates lead (pb)-free package or lead (pb)-free finish. lot code (month) lot no. pin #1 lot code (year) product-specific code
TPCF8A01 2007-01-16 3 electrical characteristics (ta = 25c) mosfet characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = 20 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 20 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = -12 v 8 ? ? v gate threshold voltage v th v ds = 10 v, i d = 200 a 0.5 ? 1.2 v r ds (on) v gs = 2.0 v, i d = 1.5 a ? 62 100 r ds (on) v gs = 2.5 v, i d = 1.5 ? a ? 50 66 drain-source on resistance r ds (on) v gs = 4.5 v, i d = 1.5 a ? 38 49 m ? forward transfer admittance |y fs | v ds = 10 v, i d = 1.5 a 2.7 5.4 ? s input capacitance c iss ? 590 ? reverse transfer capacitance c rss ? 70 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 85 ? pf rise time t r ? 3.0 ? turn-on time t on ? 7.5 ? fall time t f ? 4.4 ? switching time turn-off time t off duty < = = 10 s ? 26 ? ns total gate charge (gate-source plus gate-drain) q g ? 7.5 ? gate-source charge1 q gs1 ? 1.3 ? gate-drain (?miller?) charge q gd v dd ? = 5 v, i d = 3.0 a ? 2.1 ? nc mosfet source-drain ratings and characteristics characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 12 a forward voltage (diode) v dsf i dr = 3.0 a, v gs = 0 v ? ? -1.2 v sbd characteristics symbol test condition min typ. max unit v fm(1) i fm = 0.7 a ? 0.43 ? v peak forward voltage v fm(2) i fm = 1.0 a ? 0.46 0.49 v repetitive peak reverse current i rrm v rrm = 20 v ? ? 50 a junction capacitance c j v r = 10 v, f = 1 mhz ? 54 ? pf r l = 0.67 ? v dd ? ? i d = 1.5 a
TPCF8A01 2007-01-16 4 mosfet i d ? v gs gate-source voltage v gs (v) drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) drain current i d (a) i d ? v ds 5 4 2 1 0 0 0.2 1.7 0.4 0.6 0.8 v gs = 1.4 v 1.5 1.6 1.8 4 6 1 3 5 1.9 2 10 common source ta = 25c pulse test 8 6 4 2 0 10 0 3 4 5 v gs = 1.4v 1.5 1.6 1.7 2.1 10 3 1.9 1.8 2 1 2 common source ta = 25c pulse test 0 0 1 2 3 4 5 2 10 ta = ? 55c 25 100 4 6 8 common source v ds = -10 v pulse test drain-source voltage v ds (v) v ds ? v gs gate-source voltage v gs (v) 0 0.4 0.6 0.8 1 0 i d = 3 a 2 4 6 8 10 0.75 1.5 0.2 common source ta = 25 pulse test forward transfer admittance ? y fs ? (s) drain current i d (a) ? y fs ? ? i d 1 10 100 0.1 1 10 25 100 ta = ? 55c common source v ds = -10 v pulse test drain-source on resistance r ds (on) (m ? ) drain current i d (a) r ds (on) ? i d 1 0.1 1 10 100 10 1000 v gs = 4.5v 2.0 2.5 common source ta = 25c pulse test
TPCF8A01 2007-01-16 5 drain-source on resistance r ds (on) (m ? ) ambient temperature ta (c) r ds (on) ? ta 160 ? 40 0 40 80 120 ? 80 120 100 80 60 20 0 i d = 3a,1.5a,0.75a v gs = 2.0 v v gs = 4.5 v i d = 3a,1.5a,0.75a v gs = 2.5 v i d = 1.5a,0.75a i d = 3a 40 common source pulse test i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) 0 0.1 ? 0.4 0.3 0.5 1 3 5 10 ? 0.8 ? 1.2 v gs = 0 v 10 2.5 2.0 common source ta = 25c pulse test capacitance ? v ds capacitance c (pf) drain-source voltage v ds (v) 10 0.1 100 1000 1 3 5 10 30 50 100 c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c v th ? ta gate threshold voltage v th (v) ambient temperature ta (c) 0 0.4 0.6 0.8 1.2 ? 80 ? 40 0 40 80 120 160 1 0.2 common source v ds = -10 v i d = -200 a pulse test p d ? ta drain power dissipation p d (w) ambient temperature ta (c) 0 0 40 80 120 160 0.4 0.8 1.2 1.6 2 (4) (1) (3) (2) t = 5 s device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) 5s drain-source voltage v ds (v) total gate charge q g (nc) gate-source voltage v gs (v) dynamic input / output characteristics 0 8 v dd = 16 v v ds 4 8 10 0 2 4 6 4 8 12 16 20 0 2 4 6 v gs common source i d = -3 a ta = 25c pulse test
TPCF8A01 2007-01-16 6 safe operating area drain-source voltage v ds (v) drain current i d (a) 0.1 0.1 1 10 100 1 10 100 10 ms * i d max (pulse) * v dss max 1 ms * single pulse ta=25 curves must be derated linearly with increase in temperature . r th ? t w pulse width t w (s) transient thermal impedance r th (c/w) 1 1 m 10 m 100 m 1 10 100 1000 10 100 1000 device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) (4) (1) (2) (3)
TPCF8A01 2007-01-16 7 sbd 1 1 m 10 m 100 1 10 100 1000 10 100 100 device mounted on a glass-epoxy board (a)(note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b)(note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) (4) (1) (2) (3) i f ? v f instantaneous forward current i f (a) instantaneous forward voltage v f (v) p f (av) ? i f (av) average forward power dissipation p f (av) (w) average forward current i f (av) (a) ta m a x ? i f (av) maximum allowable lead temperature ta max (c) average forward current i f (av) (a) device mounted on a glass-epoxy board (a) (note 2a) r th ? t w pulse width t w (s) transient thermal impedance r th (c/w) surge forward current (non-repetitive) number of cycles peak surge forward current i fsm (a) c j ? v r (typ.) junction capacitance c j (pf) reverse voltage v r (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 180 dc 120 =60 rectangular waveform 0 360 conduction angle: 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 180 dc =60 120 rectangular waveform single-device operation (note 3a) 0 360 conduction angle: v r =15v i i f(av) 0 1 2 3 4 5 6 7 8 9 10 1 10 100 ta=25 f=50hz 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 125 75 25 t j =150 10 100 1000 1 10 100 f=1mhz ta=25
TPCF8A01 2007-01-16 8 i r ? t j (typ.) junction temperature t j (c) reverse current i r (ma) p r (av) ? v r (typ.) reverse voltage v r (v) average reverse power dissipation p r (av) (w) 120 140 0.0001 0.001 0.01 0.1 1 10 0 20 40 60 80 100 160 5v 10v pulse test v r =20v 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 60 120 180 240 300 dc 0 360 tj=125 v r conduction angle: rectangular waveform
TPCF8A01 2007-01-16 9 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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